1 - 4 ? 2006 ixys all rights reserved 0644 ixer 60n120 features ? npt 3 igbt - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits ? isoplus 247 tm package - isolated back surface - low coupling capacity between pins and heatsink - high reliability - industry standard outline applications ? single switches and with complementary free wheeling diodes ? choppers ? phaselegs, h bridges, three phase bridges e.g. for - power supplies, ups - ac, dc and sr drives - induction heating igbt symbol conditions maximum ratings v ces t vj = 25c to 150c 1200 v v ges 20 v i c25 t c = 25c 95 a i c90 t c = 90c 60 a i cm v ge = 15 v; r g = 22 ; t vj = 125c 100 a v cek rbsoa, clamped inductive load; l = 100 h v ces t sc v ce = 900 v; v ge = 15 v; r g = 22 ; t vj = 125c 10 s (scsoa) non-repetitive p tot t c = 25c 375 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 60 a; v ge = 15 v; t vj = 25c 2.1 2.7 v t vj = 125c 2.5 v v ge(th) i c = 2 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ; v ge = 0 v; t vj = 25c 0.1 ma t vj = 125c 0.1 ma i ges v ce = 0 v; v ge = 20 v 200 na t d(on) 80 ns t r 50 ns t d(off) 680 ns t f 30 ns e on 7.2 mj e off 4.8 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 3.8 nf q gon v ce = 600 v; v ge = 15 v; i c = 50 a 350 nc r thjc 0.33 k/w r thjh 0.66 k/w inductive load, t vj = 125c v ce = 600 v; i c = 60 a v ge = 15 v; r g = 22 i c25 =95a v ces = 1200 v v ce(sat) typ. = 2.1 v npt 3 igbt in isoplus 247 tm e c g g c e g = gate c = collector e = emitter isolated backside isoplus 247 tm e153432 p h a s e - o u t
2 - 4 ? 2006 ixys all rights reserved 0644 ixer 60n120 component symbol conditions maximum ratings t vj -55...+150 c t stg -55...+125 c v isol i isol 1 ma; 50/60 hz 2500 v~ f c mounting force with clip 20...120 n symbol conditions characteristic values min. typ. max. c p coupling capacity between shorted 30 pf pins and mounting tab in the case weight 6g equivalent circuits for simulation conduction igbt (typ. at v ge = 15 v; t j = 125c) v 0 = 0.99 v; r 0 = 25 m thermal response igbt (typ.) c th1 = 0.13 j/k; r th1 = 0.06 k/w c th2 = 0.32 j/k; r th2 = 0.27 k/w isoplus247 tm outline the convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side this drawing will meet all dimensions requirement of jedec outline to-247 ad except screw hole and except lmax. p h a s e - o u t
3 - 4 ? 2006 ixys all rights reserved 0644 ixer 60n120 01234 0 20 40 60 80 100 120 01234 0 20 40 60 80 100 120 v ce v i c v ce a i c v 9 v 11 v 9 v 11 v a 4 6 8 101214 0 40 80 120 160 v v ge a i c t vj = 25c t vj = 125c t vj = 25c t vj = 125c v ce = 20 v v ge = 17 v 15 v 13 v 13 v 15 v v ge = 17 v 0 100 200 300 400 500 0 5 10 15 20 nc q g v v ge v ce = 600 v i c = 50 a fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. turn on gate charge p h a s e - o u t
4 - 4 ? 2006 ixys all rights reserved 0644 ixer 60n120 0 20 40 60 80 100 120 0 4 8 12 16 20 0 10 20 30 40 50 60 70 80 90 100 20 40 60 80 100 0 2 4 6 8 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 0 20 40 60 80 100 120 0 2 4 6 8 10 12 0 200 400 600 800 1000 1200 0 20 40 60 80 100 120 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0 50 100 150 200 250 300 0 200 400 600 800 1000 1200 1400 0 20 40 60 80 100 120 e off t d(off) t f e off t d(off) t f i c a i c a e off e on t t r g r g v ce t s mj e on mj e off ns t ns t i cm k/w z thjc v a mj ns mj ns t r e on t r t d(on) v ce = 600 v v ge = 15 v r g = 22 t vj = 125c v ce = 600 v v ge = 15 v r g = 22 t vj = 125c v ce = 600 v v ge = 15 v i c = 50 a t vj = 125c v ce = 600 v v ge = 15 v i c = 50 a t vj = 125c e on r g = 22 t vj = 125c single pulse t d(on) ixer60n120 fig. 7 typ. turn on energy and switching fig. 8 typ. turn off energy and switching times versus gate resistor times versus gate resistor fig. 5 typ. turn on energy and switching fig. 6 typ. turn off energy and switching times versus collector current times versus collector current fig. 9 reverse biased safe operating area fig. 10 typ. transient thermal impedance rbsoa p h a s e - o u t
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